Electronic Design

Smart Biasing Keeps RF Power Amplifier On Track

Despite recent improvements in the performance of RF LDMOS field-effect transistors (FETs), temperature drift and aging continue to affect the efficiency and linearization of power amplifiers using ...
EDN

RF Power LDMOS Transistors

Freescale Semiconductor today introduced two LDMOS RF power transistors that allow wireless base station amplifiers to cover all channels in an entire allocated frequency band. The high-efficiency ...
EDN

LDMOS RF power transistors tailored for wireless base stations

Austin, Tex. — Freescale Semiconductor has released seven LDMOS RF power transistors that are said to deliver exceptional performance and enable WCDMA and CDMA2000 base station transmitters to exploit ...
Yahoo

NXP Introduces Gen8 LDMOS Technology for Bandwidth Intensive Base Stations

NXP's Gen8 LDMOS RF power transistors offer more bandwidth, more power, better electrical efficiency in a smaller form factor and at a lower cost. Compared to the previous generation, Gen8 increases ...
Business Wire

Freescale introduces industry-first 50 V RF LDMOS power transistor for high-mismatch applications

AUSTIN, Texas--(BUSINESS WIRE)--Freescale Semiconductor today introduced an RF LDMOS power transistor designed for operation from 1.8 to 600 MHz and optimized for use under the potentially-destructive ...
Telecom Lead

NXP expands LDMOS RF power transistor portfolio for wireless base stations

Doherty amplifiers by three points and improves gain by 1 dB. The Gen8 LDMOS RF power transistors offer up to 115 MHz of signal bandwidth to enable full-band operation for all cellular frequency bands ...
TV Technology

LDMOS Transistor Provides High Efficiency in Doherty Config

I have more information on a breakthrough in high power UHF solid-state amplifier efficiency. Freescale announced last Friday that its MRFE6VP8600H LDMOS RF power transistor can use up to 15 percent ...
Electronics Weekly

NXP adds GaN to LDMOS for RF power amps

These will include: CLF1G0530-50, a 0.5-3GHz 50W wideband amplifier; 2.1GHz and 2.7GHz Doherty power amplifiers for base stations; and a 100W 2.5-3.5GHz amplifier called CLF1G2535-100. “NXP has ...
New Electronics

GaN starts to encroach on LDMOS’ dominance of the power transistor market

There are transistors and then there are RF power transistors. Supplied in rugged packages, these devices supply high levels of power across the various frequencies used by today’s communications ...
Electronic Design

Multiple Transistor Types Vie For RF Power-Amplifier Sockets

While LDMOS power devices are going to low-cost plastic packages, GaAs HBTs are migrating to larger wafers to cut cost.
New Electronics

RF LDMOS power transistors

STMicroelectronics is adding a broad range of devices to the STPOWER family of LDMOS transistors, which comprises three different product series optimised for RF power amplifiers (PAs) in a variety of ...