A more efficient method for using memory in AI systems could increase overall memory demand, especially in the long term.

A team of researchers has proposed a new concept for magnet-based memory devices, which might revolutionize information storage devices owing to their potential for large-scale integration, ...

Nvidia announcements show the current shortage of storage and memory could continue into the future, driving up prices and ...

The global race to build artificial-intelligence infrastructure is straining supplies of memory chips and storage devices, but manufacturers are resisting the urge to expand too fast, The Wall Street ...

The cost of all key PC components is being hit, as apparently CPUs are now in the firing line.

Organic transistor memory devices integrate organic semiconducting materials with field‐effect transistor architectures to achieve nonvolatile data storage. These devices harness charge trapping ...

TL;DR: KIOXIA has launched next-generation UFS 4.1 memory devices designed for automotive applications, featuring 8th generation BiCS FLASH 3D technology and an in-house controller. These devices ...

The rapid advancement of artificial intelligence (AI) is driving unprecedented demand for high-performance memory solutions. AI-driven applications are fueling significant year-over-year growth in ...

The AI buildout is creating a supply-demand imbalance in storage devices. Prices of DRAM and NAND storage devices soared in 2025. Prices of memory storage devices are expected to continue to climb ...

For nearly three years, the artificial intelligence (AI) narrative revolved around one critical piece of hardware: the ...

The storage element in NAND flash memory is the floating gate MOSFET transistor. These devices are similar to a standard MOSFET device, other than there is an addition isolated gate. When a NAND flash ...

As part of CRN’s 2025 Storage 100, here are 10 vendors storage component vendors taking their offerings to new heights. The features, capabilities and services offered by storage systems and by ...