TOKYO--(BUSINESS WIRE)--Renesas Electronics Corporation (TSE: 6723), a premier supplier of advanced semiconductor solutions, today announced a new gate driver IC that is designed to drive high-voltage ...

Santa Clara, CA and Kyoto, Japan, Nov. 08, 2023 (GLOBE NEWSWIRE) -- ROHM Semiconductor today introduced the new BD2311NVX-LB gate driver IC, optimized for GaN devices, which achieves gate drive speeds ...

Santa Clara, CA and Kyoto, Japan, June 25, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the development of the BM6GD11BFJ-LB, an isolated gate driver IC optimized for driving 600V-class ...

DUBLIN--(BUSINESS WIRE)--The "Gate Driver IC Market Report: Trends, Forecast and Competitive Analysis" report has been added to ResearchAndMarkets.com's offering. The global gate driver IC market is ...

The IRS44273L low-side gate drive IC from IR offers high drive capability in a highly compact SOT-23-5L package for IGBT and MOSFET gate drive. The IC provides 1.5 A (typical) sink and source ...

With its integrated bootstrap functionality, PFC or brake, and ground fault protection this latest high-voltage IC is ideal for three-phase inverter applications with space limitations. As part of ...

Toshiba is sampling a gate driver IC tailored for three-phase brushless DC (BLDC) motors for functions like power sliding doors, power back doors (power tailgates), and power seats, as well as ...