A team of Chinese researchers has built a ferroelectric transistor with a gate length of just 1 nanometer that runs on 0.6 volts, a fraction of the voltage required by today’s commercial chip ...

Researchers have built working transistors from graphene nanoribbons less than a nanometer wide, achieving room-temperature ...

Austin, Feb. 16, 2026 (GLOBE NEWSWIRE) -- Power Transistor Market Size & Growth Insights: According to the SNS Insider, “The Power Transistor Market Size was valued at USD 16.26 Billion in 2025 and is ...

EPC’s first seventh-generation eGaN® device enters mass production, delivering up to 3× better performance than silicon MOSFETs EL SEGUNDO, CA, UNITED STATES ...

ARMS three-phase inverter platform built around the Gen-7 EPC2366 eGaN® power transistor, showcased at EPC’s booth ...

Researchers from the Delft University of Technology (TU Delft) have investigated how power electronics may be embedded in solar cells and proposed several design options for PV devices integrating ...

SiC and GaN device makers are using advanced junction structures and innovative packaging to offer more robust, cooler-running products. Advanced packaging technologies are also fueling the rise of ...

The MRFE6S9046N, MRF8S9100H/HS, and MRF8S18120H/HS high-performance RF power transistors, are based on laterally diffused metal oxide semiconductor (LDMOS) technology, and incorporate enhancements ...

Saelig Company, Inc. has announced availability of the CLIPPER CLP1500V15A1, an oscilloscope adapter that allows small voltages to be measured in the presence of very high voltages, such as those ...

Mitsubishi Electric’s new 2.0kV LV100 semiconductor device is based on its insulated-gate bipolar transistor (IGBT) technology and Relaxed Field of Cathode (RFC) diodes. It is designed for industrial ...

The CPC5608 is a 5-channel, low power transistor array integrated circuit featuring extremely low static current draw from power supply in a simple 2-state logic control input. It has two state ...