SiC MOSFETs are usually susceptible to damage as a result of short-circuiting events because of the fast switching speeds and low on-state resistance. 3 A team of researchers affiliated with the ...

Mohammad Zadeh, a senior principal electrical engineer at ETAP in Irvine, California, will be presenting during the session, "Modeling of Converter-Interfaced Renewable Sources for Short Circuit ...

While not a major topic of consideration when designing and maintaining facilities in past years, code-enforcement bodies have become increasingly aware of the danger of arc flash incidents associated ...

Trench-based silicon carbide power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) represent a dramatic improvement in the Figure of Merit (FOM) values of power conversion switching ...

Several essential factors influence how efficiently cleanliness analysis is carried out in automotive and electronics manufacturing.