Irvine, Calif.—Microsemi Corp. recently developed a high speed IGBT transistor line for welding, low to mid-power solar inverters, uninterruptible power supplies and industrial switch mode power ...

Insulated Gate Bipolar Transistors (IGBTs) have become pivotal components in modern power electronic systems, blending the high input impedance and fast switching capabilities of MOSFETs with the high ...

Researchers have built working transistors from graphene nanoribbons less than a nanometer wide, achieving room-temperature ...

While many research efforts are underway to develop active devices that can function in the challenging terahertz spectrum, others are leapfrogging to try to get some devices operate into the ...

Engineers are unveiling an upgrade to the transistor laser that could be used to boost computer processor speeds - the formation of two stable energy states and the ability to switch between them ...

Metal-Semiconductor Field-Effect Transistors (MESFETs) have long been pivotal in bridging fundamental semiconductor physics with high-performance electronic applications. As devices that combine metal ...

What are GaN HEMTs and why are they important? How GaN devices can handle kilowatt power conversion. Gallium-nitride (GaN) high electron mobility transistors (HEMTs) are a form of field-effect ...

A new study represents a significant advance in topological transistors and beyond-CMOS electronics. First time that the topological state in a topological insulator has been switched on and off using ...

For hard-switched power topologies, Infineon is planning a 100V GaN transistors with a integrated Schottky diode. “Due to the lack of body diode in hard-switching applications, GaN-based topologies ...

Characteristics of enhancement-mode (e-mode) GaN, such as positive temperature coefficient of RDS(ON) and a temperature-independent threshold voltage, make them excellent candidates for paralleling.