Abstract: In this paper, an efficient CNN model with transfer learning ability is developed for predicting the nonlinear behavior of transistors under large signal stimuli. The CNN consists of ...

Contributed by Tobin J. Marks; received October 6, 2022; accepted December 9, 2022; reviewed by Thomas E. Mallouk, Ralph G. Nuzzo,and Peidong Yang ...

Abstract: For the first time, we demonstrate gate-all-around nanosheet based I/O transistors with a gate-last fabrication flow compatible with logic transistors using two different gate oxides: ...